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2SK3255LS
N- Channel MOS Silicon FET Very High-Speed Switching Applications
TENTATIVE Features and Applications Low ON-state resistance. Low Qg. Absolute Maximum Ratings / Ta=25C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Channel Temperature Storage Temperature *) : Chip Performance Shown Electrical Characteristics / Ta=25C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time www..com Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD ID=1mA VDS=900V VGS=-30V VDS=10V VDS=10V ID=2.5A VDS=20V VDS=20V VDS=20V VDS=200V VGS=20V , , , , , , , , , , VGS=0 VGS=0 VDS=0 ID=1mA ID=2.5A VGS=10V f=1MHz f=1MHz f=1MHz ID=2.5A VDSS VGSS ID* IDP PD Tch Tstg 900 -30 5 15 35 150 --55 to -150 min 900 unit V V A A W C C typ max unit V A nA V S pF pF pF nC ns ns ns ns V
(TC=25C)
2.5 2.4
250 -100 3.5 4.0 2.1 1100 115 28 44 21 43 160 47 1.5 2.8
See Specified Test Circuit IS=2.5A , VGS = 0
(Note) Be careful in handling the2SK3255LS because it has no protection diode between gate and source.
Switching Time Test Circuit
VDD=200V PW=1 S D.C.0.5% ID=2.5A RL=80 D VOUT
3.5 7.2
Package Dimensions
3.2 10.0
TO-220FI(LS)
4.5 2.8
(unit:mm)
16.1
VGS=10V
16.0
3.6
0.9 1.2 14.0
G 2SK3255LS P.G RGS 50 S
0.75
0.7
2.4
1
2
3
2.55
2.55
1 : Gate 2 : Drain 3 : Source
Specifications and information herin are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
HD-010711
0.6 1.2
2SK3255LS
5 4.5 4 3.5 Drain Current,ID-A 3 2.5 2 1.5 1 0.5 0 0 2 4
2SK3255LS ID - VDS
9 8 7 6 5 4 3 2 1 VGS=4V 0 8V 10V 6V Drain Current,ID-A -25 75 25
2SK3255LS ID - VGS VDS=20V
5V
6 8 Drain to Source Voltage,VDS-V 2SK3255LS RDS(on)-VGS
10
12
0
5
10 Gate to Source Voltage,VGS-V 2SK3255LS RDS(on)-Tc
15
20
5 4.5 4 Static Drain to Source on State resistance,RDS(on)- 3.5 3 2.5 2 1.5 1
TC=25 ID=2.5A ID=1A ID=5A
6.0 5.0 Static Drain to Source on State Resistance,RDS(on)-m
4.0
3.0
2.0
1.0 0.5 0 0 2 4 6 8 10 12 Gate to Source Voltage,VGS-V 2SK3255LS |yfs|-ID 14 16 18 20 0.0 -50 -25 0 25 50 75 Case Temperature,Tc- 2SK3255LS VGS(off)-Tc
VGS=10V,ID=2.5A VGS=15V,ID=2.5A 100 125 150
10 Tc=-25 Tc=25 Tc=75 Forward Transfer Admittance,|yfs|-S
VDS=10V
5 4.5 Gate to Source CutoffVoltage,VGS(off)-V 4 3.5 3 2.5 2 1.5 1 0.5
VDS=10V ID=1mA
1
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0 0.1 1 Drain Current,ID-A 2SK3255LS IF-VSD 10 100
0 -50
-25
0
25 50 75 Case Temperature.Tc-
100
125
150
100 10 Forward Drain Current,IF-A Tc=-25 Tc=25 Tc=75
VGS=0V
10000 1000
2SK3255LS Ciss,Coss,Crss-VDS f=1MHz
Ciss Coss Crss
1
0.1
Ciss,Coss,Crss-pF
100
0.01
0.001 0 0.3 0.6 0.9 Forward Drain to Source Voltage,VSD-V 1.2 1.5
10 0 5 10 15 20 Drain to Source Voltage,VDS-V 25 30
2SK3255LS
12 10 Gate to Source Voltage,VGS-V
2SK3255LS Qg -VGS
VDS=200V ID=2.5A
1000 Switching Time,S/W time-ns
2SK3255LS S/W time-ID
VDD=200V VGS=10V
8
100
6
4
10 td(on) tr td(off) tf 1
2
0 0 5 10 15 20 25 30 Total Gate Charge,Qg-nC 2SK3255LS ASO 40 35 10S Allowable Power Dissipation,PD-W 30 25 20 15 10 5 0 1 10 100 Drain to Source Voltage,VDS-V 1000 35 40 45 50
0.1
1 Drain Current,ID-A PD - Tc
10
100 IDP=15A 10 Drain Current,ID-A ID=5A
100S 1 1mS Operation in this area is limited by RDS(on). 0.1 DC Operation Tc=25 Single pulse 0.01 10mS 100mS
0
20
40
60 80 100 Case Temperature.Tc-
120
140
160
PD - Ta 2.5
Allowable Power Dissipation,PD-W
2
1.5
www..com 1
0.5
0 0 20 40 60 80 100 Ambient Temperature.Ta- 120 140 160

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